PART |
Description |
Maker |
HYB25D128323C-L4.5 |
128 Mbit DDR SGRAM 128兆的DDR SGRAM
|
Infineon Technologies AG
|
UPD4811650GF-A10-9BT UPD4811650GF-A80-9BT UPD48116 |
Synchronous Graphics RAM (SGRAM) 同步图形RAM(SGRAM
|
Vishay Intertechnology, Inc.
|
HMD32M32M16EG HMD32M32M16EG-5 HMD32M32M16EG-6 |
128Mbyte (32Mx32) 72-pin EDO Mode 4K Ref. SIMM Design 5V
|
Hanbit Electronics Co.,Ltd
|
WV3EG265M72EFSU262D4S WV3EG265M72EFSU265D4SG |
1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA 1GB 2x64Mx72 DDR内存,无缓冲,锁相环,FBGA封装
|
Square D by Schneider Electric Diodes, Inc.
|
MSM54V24632A MSM54V24632A-10GS-BK4 MSM54V24632A-12 |
131,072-word x 32-bit x 2-bank SGRAM without graphics functionc 131,072-Word x 32-Bit x 2-Bank SGRAM without Graphics Functions
|
OKI electronic components OKI[OKI electronic componets]
|
TS1GJF150 |
1GB USB2.0 JetFlash垄芒 1GB USB2.0 JetFlash?
|
Transcend Information. Inc. Transcend Information. ...
|
TS1GJF2A |
1GB USB2.0 JetFlash垄莽2A 1GB USB2.0 JetFlash?2A
|
Transcend Information. Inc. Transcend Information. ...
|
HYMD5126468 HYMD512646L8 |
128Mx64|2.5V|K/H/L|x16|DDR SDRAM - Unbuffered DIMM 1GB 128Mx64 | 2.5V的| /升| x16 | DDR SDRAM无缓冲DIMM 1GB
|
Lattice Semiconductor, Corp.
|
MS82V48540-8 FEDS82V48540-01 MS82V48540 MS82V48540 |
393,216-Word 】 32-Bit 】 4-Bank FIFO-SGRAM
|
OKI[OKI electronic componets]
|
K4G323222A-QC/L45 K4G323222A-QC/L50 K4G323222A-QC/ |
512K x 32Bit x 2 Banks Synchronous Graphic RAM Data Sheet 32Mbit SGRAM 32兆SGRAM
|
Samsung Electronic Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYB18T1G160AC-3.7 HYB18T1G160AC-5 HYB18T1G400AC-3. |
DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 533 (4-4-4); Available 3Q04 DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 400 (3-3-3); Available 3Q04 DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 533 (4-4-4); Available 3Q04 DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 400 (3-3-3); Available 3Q04 DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 533 (4-4-4); Available 3Q04 DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 400 (3-3-3); Available 3Q04
|
Infineon
|